SILICON CARBIDE (SIC) POWER DEVICES 2018 GLOBAL MARKET EXPECTED TO GROW AT CAGR OF 35.73% AND FORECA
A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
The analysts forecast Global Silicon Carbide (SiC) Power Devices market to grow at a CAGR of 35.73% from 2018-2022.
Covered in this report
The report covers the present scenario and the growth prospects of the Global Silicon Carbide (SiC) Power Devices market for the period 2018-2022. To calculate the market size, the report presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources.
The market is divided into the following segments based on geography:
• Americas
• APAC
• EMEA
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The report, Global Silicon Carbide (SiC) Power Devices Market 2018-2022, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.
Key vendors
• Cree
• Infineon Technologies
• Mitsubishi Electric
• ROHM Semiconductor
• STMicroelectronics
Market driver
• Growing demand for power electronics
• For a full, detailed list, view our report
Market challenge
• High SiC material cost
• For a full, detailed list, view our report
Market trend
• Transition toward larger SiC wafer
• For a full, detailed list, view our report
Key questions answered in this report
• What will the market size be in 2022 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?
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Table of Contents –Analysis of Key Points
PART 01: EXECUTIVE SUMMARY
PART 02: SCOPE OF THE REPORT
PART 03: RESEARCH METHODOLOGY
PART 04: MARKET LANDSCAPE
Market ecosystem
Market characteristics
Market segmentation analysis
PART 05: MARKET SIZING
Market definition
Market sizing 2017
Market size and forecast 2017-2022
PART 06: FIVE FORCES ANALYSIS
Bargaining power of buyers
Bargaining power of suppliers
Threat of new entrants
Threat of substitutes
Threat of rivalry
Market condition
PART 07: MARKET SEGMENTATION BY APPLICATION
Segmentation by application
Comparison by application
UPS&PS – Market size and forecast 2017-2022
PV inverters – Market size and forecast 2017-2022
IMDs – Market size and forecast 2017-2022
EV/HEVs – Market size and forecast 2017-2022
Others – Market size and forecast 2017-2022
Market opportunity by application
PART 08: MARKET SEGMENTATION BY PRODUCT
Segmentation by product
Comparison by product
Diodes – Market size and forecast 2017-2022
Transistors – Market size and forecast 2017-2022
Modules – Market size and forecast 2017-2022
Market opportunity by product
PART 09: CUSTOMER LANDSCAPE
PART 10: REGIONAL LANDSCAPE
Geographical segmentation
Regional comparison
APAC – Market size and forecast 2017-2022
EMEA – Market size and forecast 2017-2022
Americas – Market size and forecast 2017-2022
Market opportunity
PART 11: DECISION FRAMEWORK
PART 12: DRIVERS AND CHALLENGES
Market drivers
Market challenges
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PART 13: MARKET TRENDS
Transition toward larger SiC wafer
Entrance of multiple suppliers of SiC wafers
Implementation of automation in industries
Use of SiC power devices for extreme operations
PART 14: VENDOR LANDSCAPE
Competitive scenario
Overvie
Landscape disruption
PART 15: VENDOR ANALYSIS0
Vendors covered
Vendor classification
Market positioning of vendors
Cree
Infineon Technologies
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
TOSHIBA
..…..Continued
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